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| ADE-208-090B(Z) HSM198S Silicon Schottky Barrier Diode forVarious Detector,High speed switching Preliminary Rev.2 Jun. 1993 Features * Detection efficiency is very good. * Small temperature coefficient. * HSM198S which is interconnected in series configuration is designed for balanced mixer use * MPAK package is suitable for high density surface mounting and high speed assembly. 2 Pin Arrangement 3 1 Ordering Information Type No. HSM198S Laser Mark C6 Package Code MPAK (Top View) 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 Absolute Maximum Ratings (Ta = 25C) Item Reverse voltage Average forward current Junction temperature Storage temperature * Two device total Symbol VR I o* Tj Tstg Value 10 30 125 -55 to +125 Unit V mA C C Electrical Characteristics (Ta = 25C) * Item Forward voltage Reverse current Forward current Capacitance Capacitance deviation Rectifier efficiency ESD Capability Symbol Min VF IR IF C VF -- -- -- 4.5 -- -- 70 30 Typ -- -- -- -- -- -- -- Max 1.1 70 -- 1.5 10 -- -- Unit V A mA pF mV % V Test Condition IF = 5 mA VR= 6 V VF = 1 V VR= 1 V, f = 1 MHz IF = 5 mA Vin=2Vrms, f =40MHz RL=5k , CL=20 pF ** C=200pF, Both forward and reverse direction 1 pulse * Per one device ** Failure Criterrion ; IR 140 A at VR = 6V HSM198S 10 -2 10 -2 Forward current I F (A) Reverse current I R (A) 0.4 0.6 0.8 0.2 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 10 -3 10 -3 10 -4 10 -4 10 -5 10 -5 10 -6 0 1.0 10 -6 0 4 16 Reverse voltage VR (V) 8 12 20 Fig.2 Reverse current Vs. Reverse voltage f=1MHz 10 Capacitance C (pF) 1.0 10 -1 10 -1 1.0 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 10 HSM198S Package Dimensions 0.65 - 0.3 + 0.1 Unit: mm Laser Mark 0.4 - 0.05 + 0.10 0.16 - 0.06 + 0.10 3 + 0.2 - 0.6 1.9 0.3 2.8 + 0.1 - 0.3 0.1 0.65 + 0.3 - 2 0.95 1 0.95 2.8 C6 1.5 0 - 0.10 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HITACHI Code 1.1 - 0.1 + 0.2 MPAK(1) -- SC-59A 0.011 JEDEC Code EIAJ Code Weight (g) |
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